SKA06N60XKSA1

Trans IGBT Chip N-CH 600V 9A 32000mW 3Pin3+Tab TO-220FP

This IGBT transistor from Technologies is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 32000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.