SPP80N03S2L04AKSA1

SPP80N03S2L04AKSA1图片1
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SPP80N03S2L04AKSA1概述

TO-220AB N-CH 30V 80A

N-Channel 30V 80A Tc 188W Tc Through Hole PG-TO220-3-1


得捷:
MOSFET N-CH 30V 80A TO220-3


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; SPP80N03S2L04AKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 188000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.


富昌:
SPP80N03S2L 系列 30 V 3.9 mOhm N沟道 OptiMOS® 功率-晶体管 - P- TO-220 -3


Verical:
Trans MOSFET N-CH 30V 80A 3-Pin3+Tab TO-220AB Tube


Win Source:
MOSFET N-CH 30V 80A TO220-3 / N-Channel 30 V 80A Tc 188W Tc Through Hole PG-TO220-3-1


SPP80N03S2L04AKSA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 188 W

漏源极电压Vds 30 V

连续漏极电流Ids 80A

上升时间 20 ns

输入电容Ciss 3900pF @25VVds

下降时间 19 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 188W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3-1

外形尺寸

封装 TO-220-3-1

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Last Time Buy

包装方式 Tube

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买SPP80N03S2L04AKSA1
型号: SPP80N03S2L04AKSA1
描述:TO-220AB N-CH 30V 80A

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