高压快速开关NPN功率晶体管 High voltage fast-switching NPN Power transistor
- 双极 BJT - 单
得捷:
TRANS NPN 750V 12A ISOWATT-218FX
e络盟:
单晶体管 双极, NPN, 750 V, 62 W, 12 A, 6.5 hFE
艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ST1510FX GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 62000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 750 V and a maximum emitter base voltage of 9 V.
安富利:
Trans GP BJT NPN 750V 12A 3-Pin3+Tab ISOWATT218FX Tube
Chip1Stop:
Trans GP BJT NPN 750V 12A 62000mW 3-Pin3+Tab ISOWATT218FX Tube
Verical:
Trans GP BJT NPN 750V 12A 62000mW 3-Pin3+Tab ISOWATT218FX Tube
儒卓力:
**NPN TRANS.750V 12A ISOWATT218FX **
DeviceMart:
IC TRANS NPN PWR HV ISOWATT218FX