SM15T12AHE3/9AT

SM15T12AHE3/9AT图片1
SM15T12AHE3/9AT图片2
SM15T12AHE3/9AT概述

Diode TVS Single Uni-Dir 10.2V 1.5kW 2Pin SMC T/R

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 1500 W peak pulse power capability with a 10/1000 μs waveform

• Excellent clamping capability

• Low inductance

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

  Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.

SM15T12AHE3/9AT中文资料参数规格
技术参数

脉冲峰值功率 1500 W

最小反向击穿电压 11.4 V

封装参数

安装方式 Surface Mount

封装 DO-214AB

外形尺寸

封装 DO-214AB

物理参数

工作温度 -65℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 汽车级

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买SM15T12AHE3/9AT
型号: SM15T12AHE3/9AT
描述:Diode TVS Single Uni-Dir 10.2V 1.5kW 2Pin SMC T/R
替代型号SM15T12AHE3/9AT
型号/品牌 代替类型 替代型号对比

SM15T12AHE3/9AT

Vishay Semiconductor 威世

当前型号

当前型号

SM15T12A-E3/9AT

威世

完全替代

SM15T12AHE3/9AT和SM15T12A-E3/9AT的区别

SM15T12A-E3/57T

威世

类似代替

SM15T12AHE3/9AT和SM15T12A-E3/57T的区别

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