ST13003N

高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor

- 双极 BJT - 单 NPN 400 V 1 A - 20 W 通孔 SOT-32-3

得捷:
TRANS NPN 400V 1A SOT32-3

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ST13003N GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 20000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.

Chip1Stop:
Trans GP BJT NPN 400V 1A 3-Pin3+Tab SOT-32 Bag

Verical:
Trans GP BJT NPN 400V 1A 20000mW 3-Pin3+Tab SOT-32 Bag