STMICROELECTRONICS STPSC8H065B-TR 二极管, 碳化硅肖特基, SIC, 650V系列, 单, 650 V, 8 A, 23.5 nC, TO-252
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
**Key Features**
正向电压 1.75V @8A
反向恢复时间 0 ns
正向电流 8 A
最大正向浪涌电流(Ifsm) 75 A
正向电压Max 1.75 V
正向电流Max 8000 mA
工作温度Max 175 ℃
工作温度Min -40 ℃
工作结温Max 175 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -40℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STPSC8H065B-TR ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STPSC8H065D 意法半导体 | 功能相似 | STPSC8H065B-TR和STPSC8H065D的区别 |
STPSC8H065G-TR 意法半导体 | 功能相似 | STPSC8H065B-TR和STPSC8H065G-TR的区别 |