STPSC806G-TR

STMICROELECTRONICS  STPSC806G-TR  二极管, 碳化硅肖特基, SIC, 600V系列, 单, 600 V, 8 A, 10 nC, TO-263

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

**Key Features**

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No or negligible reverse recovery

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Switching behavior independent of temperature

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Particularly suitable in PFC boost diode function