Diode Schottky 650V 12A 2Pin TO-220AC Tube
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
**Key Features**
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STPSC12H065D ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STTH12R06D 意法半导体 | 类似代替 | STPSC12H065D和STTH12R06D的区别 |
STPS10L60D 意法半导体 | 类似代替 | STPSC12H065D和STPS10L60D的区别 |
STTH812FP 意法半导体 | 类似代替 | STPSC12H065D和STTH812FP的区别 |