STPSC10H065G-TR

STMICROELECTRONICS  STPSC10H065G-TR  二极管, 碳化硅肖特基, SIC, 650V系列, 单, 650 V, 10 A, 28.5 nC, TO-263

The is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is especially suited for use in PFC applications and this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

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No or negligible reverse recovery

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Switching behaviour independent of temperature

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High forward surge capability