STPSC12H065CT

STMICROELECTRONICS  STPSC12H065CT  二极管, 碳化硅肖特基, SIC, 650V系列, 双共阴极, 650 V, 12 A, 18 nC, TO-220AB

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.

Especially suited for use in interleaved or bridge-less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

**Key Features**

.

No or negligible reverse recovery

.

Switching behavior independent of temperature

.

High forward surge capability

.

ECOPACK® 2 compliant component