



高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
- 双极 BJT - 单
得捷:
TRANS NPN 400V 2A SOT32-3
贸泽:
双极晶体管 - 双极结型晶体管BJT RECTIFIER
艾睿:
STMicroelectronics has the solution to your circuit&s;s high-voltage requirements with their NPN STT13005 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 45000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
安富利:
Trans GP BJT NPN 400V 2A 3-Pin3+Tab SOT-32 Tube
Chip1Stop:
Trans GP BJT NPN 400V 2A 3-Pin3+Tab SOT-32 Tube
Win Source:
TRANS NPN 400V 2A SOT-32
极性 NPN
耗散功率 45000 mW
击穿电压集电极-发射极 400 V
集电极最大允许电流 2A
最小电流放大倍数hFE 10 @500mA, 5V
额定功率Max 45 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 45000 mW
安装方式 Through Hole
引脚数 3
封装 TO-126-3
长度 7.8 mm
宽度 2.7 mm
高度 10.8 mm
封装 TO-126-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STT13005 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STT13005D-K 意法半导体 | 类似代替 | STT13005和STT13005D-K的区别 |
BULT118 意法半导体 | 类似代替 | STT13005和BULT118的区别 |
STT13005FP 意法半导体 | 类似代替 | STT13005和STT13005FP的区别 |