N沟道700V - 1欧姆 - 7.5A TO- 220 / FP / D2PAK / I2PAK / TO- 247齐纳保护SuperMESH⑩Power MOSFET N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.
■ TYPICAL RDSon = 1.0 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE RATED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
额定电压DC 700 V
额定电流 7.50 A
漏源极电阻 1.20 Ω
极性 N-Channel
耗散功率 115W Tc
漏源极电压Vds 700 V
漏源击穿电压 700 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 7.50 A
输入电容Ciss 1370pF @25VVds
额定功率Max 115 W
耗散功率Max 115W Tc
安装方式 Surface Mount
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STB9NK70ZT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB6N62K3 意法半导体 | 类似代替 | STB9NK70ZT4和STB6N62K3的区别 |
STD6N62K3 意法半导体 | 功能相似 | STB9NK70ZT4和STD6N62K3的区别 |
FQB6N70TM 飞兆/仙童 | 功能相似 | STB9NK70ZT4和FQB6N70TM的区别 |