SI9933ADY

双P沟道PowerTrench MOSFET Dual P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V.

Features

· –5 A, –20 V, RDSON = 75 mW @ VGS = –4.5 V

RDSON = 105 mW @ VGS = –3.0 V

RDSON = 115 mW @ VGS = –2.7 V

· Extended VGSS range ±12V for battery applications

· Low gate charge

· High performance trench technology for extremely

low RDSON

· High power and current handling capability

Applications

· Load switch

· Motor drive

· DC/DC conversion

· Power management