





N沟道600V - 0.37ohm -10A - TO- 220 , TO- 220FP- IPAK - DPAK第二代的MDmesh功率MOSFET N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET
Description
This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
General features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
Applications
■ Switching application
额定电压DC 600 V
额定电流 10.0 A
耗散功率 90W Tc
输入电容 850 pF
栅电荷 31.0 nC
漏源极电压Vds 600 V
连续漏极电流Ids 10.0 A
上升时间 18.5 ns
输入电容Ciss 850pF @50VVds
额定功率Max 90 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD11NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD11NM60ND 意法半导体 | 类似代替 | STD11NM60N和STD11NM60ND的区别 |