STI11NM60ND

STI11NM60ND图片1
STI11NM60ND概述

N沟道600V - 0.37Ω - 10A - FDmesh ™II功率MOSFET I2PAK , TO- 220 , TO- 220FP , IPAK , DPAK N-channel 600V - 0.37Ω - 10A - FDmesh? II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description

The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout and associates all advantages of reduced on resistance and fast switching with an intrinsic fast recovery body diode.It is therefore strongly recommended for bridge topologies, in particular

 

■ The worldwide best RDSon
.
area amongst the fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche capabilities

STI11NM60ND中文资料参数规格
技术参数

耗散功率 90W Tc

漏源极电压Vds 600 V

输入电容Ciss 850pF @50VVds

耗散功率Max 90W Tc

封装参数

安装方式 Through Hole

封装 TO-262-3

外形尺寸

封装 TO-262-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买STI11NM60ND
型号: STI11NM60ND
描述:N沟道600V - 0.37Ω - 10A - FDmesh ™II功率MOSFET I2PAK , TO- 220 , TO- 220FP , IPAK , DPAK N-channel 600V - 0.37Ω - 10A - FDmesh? II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
替代型号STI11NM60ND
型号/品牌 代替类型 替代型号对比

STI11NM60ND

ST Microelectronics 意法半导体

当前型号

当前型号

STB11NM60

意法半导体

类似代替

STI11NM60ND和STB11NM60的区别

STB11NM60T4

意法半导体

功能相似

STI11NM60ND和STB11NM60T4的区别

STD11NM60ND

意法半导体

功能相似

STI11NM60ND和STD11NM60ND的区别

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