PNP中功率晶体管 PNP MEDIUM POWER TRANSISTOR
Bipolar BJT Transistor PNP 80V 1.5A 50MHz 1.4W Surface Mount SOT-89-3
得捷:
TRANS PNP 80V 1.5A SOT89-3
艾睿:
The three terminals of this PNP STF817A GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1400 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
Chip1Stop:
Trans GP BJT PNP 80V 1.5A 4-Pin3+Tab SOT-89 T/R
Win Source:
TRANS PNP 80V 1.5A SOT89
额定电压DC -30.0 V
额定电流 -3.00 A
极性 PNP, P-Channel
耗散功率 1.40 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 1.5A
最小电流放大倍数hFE 30 @1A, 2V
额定功率Max 1.4 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1400 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
封装 SOT-89-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
