VISHAY SIC772CD-T1-GE3 功率级, DrMOS, MOSFET带集成肖特基二极管, 4.5V-24V电源, 40A输出, POWERPAK-40
The is an integrated Power Stage Solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. The internal power MOSFETs utilizes Vishay"s state-of-the-art TrenchFET Gen IV technology that delivers industry bench-mark performance to significantly reduce switching and conduction losses. The SiC772 incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control and integrated bootstrap Schottky diode, a thermal warning THWn alerts the system of excessive junction temperature. This driver is also compatible with wide range of PWM controller with the support of tri-state PWM, 5V PWM logic and skip mode SMOD for improve light load efficiency.
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- Industry benchmark MOSFET with integrated Schottky diode
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- Delivers in excess of 40A continuous current
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- 86% Peak efficiency at 19 to 1V and 18A
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- High frequency operation up to 1.5MHz
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- Power MOSFETs optimized for 19V input stage
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- 5V PWM logic with tri-state and hold-off
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- SMOD logic for light load efficiency boost
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- Thermal monitor flag
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- Compliant with Intel DrMOS 4.0 specification