VISHAY SIC779CD-T1-GE3 芯片, MOSFET, 高压侧和低压侧, 3V-16V电源, 20ns延迟, POWERPAK-40
The is an integrated DrMOS Power Stage Solution optimized for high frequency buck applications. Operating frequencies in excess of 1MHz can easily be achieved. It contains PWM optimized n-channel MOSFETs high-side and low-side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC779 delivers up to 40A continuous output current and operates from an input voltage range of 3 to 16V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 to 2V with a nominal input voltage of 12V. The device can also deliver very high power at 5V output for ASIC applications. It incorporates an advanced MOSFET gate driver IC. This IC accepts a single PWM input from the VR controller and converts it into the high-side and low-side MOSFET gate drive signals.
输出接口数 1
针脚数 40
耗散功率 25000 mW
下降时间Max 8 ns
上升时间Max 15 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 25000 mW
电源电压 4.5V ~ 5.5V
电源电压Max 16 V
电源电压Min 3 V
安装方式 Surface Mount
引脚数 40
封装 PowerPAK
高度 0.75 mm
封装 PowerPAK
工作温度 -40℃ ~ 150℃ TJ
包装方式 Cut Tape CT
制造应用 Consumer Electronics, Computers & Computer Peripherals, 信号处理, 消费电子产品, Signal Processing, 计算机和计算机周边
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15