VISHAY SI9910DJ-E3 芯片, MOSFET驱动器, 非反相, DIP-8
DESCRIPTION
The Si9910 Power MOSFET driver provides optimized gate drive signals, protection circuitry and logic level interface. Very low quiescent current is provided by a CMOS buffer and a high-current emitter-follower output stage. This efficiency allows operation in high-voltage bridge applications with “bootstrap” or “charge-pump” floating power supply techniques.
FEATURES
dv/dt and di/dt Control
Undervoltage Protection
Short-Circuit Protection
trr Shoot-Through Current Limiting
Low Quiescent Current
CMOS Compatible Inputs
Compatible with Wide Range of MOSFET Devices
Bootstrap and Charge Pump Compatible High-Side Drive
工作电压 10.8V ~ 16.5V
额定功率 700 mW
上升/下降时间 50ns, 35ns
输出接口数 1
输出电压 10.7 V
输出电流 1 A
通道数 1
针脚数 8
上升时间 50ns Max
下降时间 35ns Max
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 10.8V ~ 16.5V
电源电压Max 16.5 V
电源电压Min 10.8 V
安装方式 Through Hole
引脚数 8
封装 DIP-8
长度 10.92 mm
高度 3.81 mm
封装 DIP-8
工作温度 -40℃ ~ 85℃
包装方式 Each
RoHS标准 RoHS Compliant
含铅标准 Lead Free