RF Amp Chip Dual GP 1.1GHz 5.5V 16Pin QFN EP
The is GaAs, pHEMT and HBT two stage Low-Noise Amplifier LNA with a active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode front end device provides ultra-low Noise Figure NF while the HBT output stage provides high gain, linearity and efficiency. The internal active bias circuitry provides stable performance over temperature, and process variation. The device offers the ability to externally adjust supply current, first stage gain and frequency response. Noise figure of The SKY67105-306LF operates in the frequency range of 0.6 to 1.1 GHz and the associated evaluation board designs are optimized for operation in the 0.75 – 0.95 GHz band. For higher frequency operation, the pin and layout compatible SKY67106-306LF is available as well. The LNA is manufactured in a compact, 4 x 4 mm, 8-pin Quad Flat No-Lead QFN package and is categorized as Skyworks Green.