SEMIKRON SKHI 23/12 R 芯片, IGBT驱动器, 1.2KV, 1.4US
The is a dual SEMIDRIVER™ Medium Power Driver for half-/full-bridge IGBT modules. It drives all IGBTs with VCE up to 1200V. To protect the driver against moisture and dust it is coated with varnish. The adaption of the drivers to the application has been improved by using pins to changing several parameters and functions. The connections to the IGBTs can be made by using only one MOLEX connector with 12 pins or by using 2 separate connectors with 5 pins for each IGBT. The high power outputs capability was designed to switch high current double or single modules or paralleled IGBTs. The output buffer has been improved to make it possible to switch up to 200A IGBT module at frequency up to 20kHz. A new function has been added to the short circuit protection circuitry soft turn-OFF, this automatically increases the IGBT turn-OFF time and hence reduces the DC voltage overshoot enabling the use of higher DC-bus voltages. This means an increase in the final output powe
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- Double driver circuit for medium power IGBTs, also as two independent single drivers
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- CMOS/TTL HCMOS compatible input buffers
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- Short-circuit protection by VCE monitoring
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- Soft short-circuit turn-OFF
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- Isolation due to transformers no opto couplers
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- Supply under-voltage monitoring <13V
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- Error memory/output signal low or high logic
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- Driver interlock top/bottom
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- Internal isolated power supply
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- 1200V Collector emitter voltage sense