SI2300DS-T1-GE3

VISHAY  SI2300DS-T1-GE3  晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.055 ohm, 4.5 V, 600 mV

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications.

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100% Rg tested

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Halogen-free

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-55 to 150°C Operating temperature range

艾睿:
Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R

安富利:
Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R

富昌:
单 N沟道 30 V 68 mΩ 3 nC 表面贴装 功率 Mosfet - SOT-23

Verical:
Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2300DS-T1-GE3  MOSFET Transistor, N Channel, 3.6 A, 30 V, 0.055 ohm, 4.5 V, 600 mV