SI2367DS-T1-GE3

VISHAY  SI2367DS-T1-GE3  晶体管, P沟道

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

欧时:
### P 通道 MOSFET，8V 至 20V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

艾睿:
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R

安富利:
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R

富昌:
Si2367DS Series P-Channel 20 V 66 mOhm 0.96 W Surface Mount Mosfet - TO-236

Verical:
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2367DS-T1-GE3  MOSFET Transistor, P Channel, -3.8 A, -20 V, 66 mohm, 4.5 V, -400 mV

力源芯城:
-20V,-3.8A,66mΩ,P沟道MOSFET