SI2318CDS-T1-GE3

VISHAY  SI2318CDS-T1-GE3  晶体管, MOSFET, N沟道, 3.9 A, 40 V, 0.036 ohm, 10 V, 3 V

The SI2318DS-T1-E3 is a N-channel TrenchFET® Power MOSFET with power dissipation at 750mW.

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±20V Gate-source voltage

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Halogen-free

e络盟:
VISHAY  SI2318CDS-T1-GE3  晶体管, MOSFET, N沟道, 3.9 A, 40 V, 0.036 ohm, 10 V, 3 V

艾睿:
Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R

富昌:
N-沟道 40 V 0.042 Ohm 2.1 W 功率 MosFet 表面贴装 - SOT-23-3

Verical:
Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2318CDS-T1-GE3  MOSFET Transistor, N Channel, 5.6 A, 40 V, 0.035 ohm, 10 V, 1.2 V