SI8816EDB-T2-E1

VISHAY  SI8816EDB-T2-E1  晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.087 ohm, 10 V, 600 mV

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, OVP management, high-speed switching and DC-to-DC converter applications.

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0.8 x 0.8mm Ultra-small outline

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0.4mm Maximum ultra-thin height

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1700V ESD protection