VISHAY SI2312CDS-T1-GE3 晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 µohm, 4.5 V, 450 mV
The is a 20V N-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch for portable applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
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- Halogen-free according to IEC 61249-2-21 definition
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- 100% Rg Tested
针脚数 3
漏源极电阻 0.0265 Ω
极性 N-Channel
耗散功率 1.25 W
阈值电压 450 mV
漏源极电压Vds 20 V
上升时间 17 ns
下降时间 8 ns
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 3
封装 SOT-23
封装 SOT-23
工作温度 -55℃ ~ 150℃
包装方式 Tape & Reel TR
制造应用 Portable Devices, 电源管理, Power Management, 便携式器材
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SI2312CDS-T1-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRLML6244TRPBF 英飞凌 | 功能相似 | SI2312CDS-T1-GE3和IRLML6244TRPBF的区别 |
DMG6968U-7 美台 | 功能相似 | SI2312CDS-T1-GE3和DMG6968U-7的区别 |