VISHAY SI2336DS-T1-GE3 晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV
The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for boost converter and DC-to-DC converter applications.
- .
- 100% Rg tested
- .
- -55 to 150°C Operating temperature range
- .
- Halogen-free
贸泽:
MOSFET 30V 107A N-CH MOSFET
艾睿:
Trans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R
富昌:
Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236
Newark:
# VISHAY SI2336DS-T1-GE3 MOSFET Transistor, N Channel, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV
针脚数 3
漏源极电阻 0.034 Ω
极性 N-Channel
耗散功率 1.8 W
阈值电压 400 mV
漏源极电压Vds 30 V
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.6 mm
高度 1.45 mm
封装 SOT-23-3
包装方式 Tape & Reel TR
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99