VISHAY SIS412DN-T1-GE3 晶体管, MOSFET, N沟道, 12 A, 30 V, 20 mohm, 10 V, 1 V
The is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
针脚数 8
漏源极电阻 0.02 Ω
极性 N-Channel
耗散功率 15.6 W
阈值电压 1 V
漏源极电压Vds 30 V
输入电容Ciss 435pF @15VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3200 mW
引脚数 8
封装 1212
高度 1.04 mm
封装 1212
包装方式 Tape & Reel TR
制造应用 Computers & Computer Peripherals, Power Management, 消费电子产品, 计算机和计算机周边, 电源管理, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free