SQ3419EEV-T1-GE3

VISHAY  SQ3419EEV-T1-GE3  晶体管, MOSFET, P沟道, -7.4 A, -40 V, 0.041 ohm, -10 V, -1.5 V

The is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.

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100% Rg tested

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100% UIS tested

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AEC-Q101 qualified

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800V ESD protection

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Halogen-free

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-55 to 175°C Operating temperature range