SIR172DP-T1-GE3

VISHAY  SIR172DP-T1-GE3  晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0074 ohm, 10 V, 2.5 V

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for high-side switch applications.

.

Low thermal resistance PowerPAK® package with small size and low 1.07mm profile

.

Optimized for high-side synchronous rectifier operation

.

100% Rg tested

.

100% UIS tested

.

Halogen-free

.

-55 to 150°C Operating temperature range