SI4425DDY-T1-GE3

VISHAY  SI4425DDY-T1-GE3  晶体管, MOSFET, P沟道, -19.7 A, -30 V, 8.1 mohm, -10 V, -1.2 V

The is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.

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100% Rg tested

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Halogen-free

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-55 to 150°C Operating temperature range

艾睿:
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R

富昌:
-30 V 19.7 A 9.8 Mohm 漏源导通电阻 当10 V时 27 nC Qg SO-8

Verical:
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4425DDY-T1-GE3  MOSFET Transistor, P Channel, -19.7 A, -30 V, 8100 µohm, -10 V, -1.2 V

儒卓力:
**MOSFET -30V 10mOhm -20A SO-8 **