SIS436DN-T1-GE3

SIS436DN-T1-GE3图片1
SIS436DN-T1-GE3图片2
SIS436DN-T1-GE3中文资料参数规格
物理参数

工作温度 -55℃ ~ 150℃

其他

RDS-on 10.5@10V mOhm

Typical Fall Time 10|8 ns

Maximum Drain Source Voltage 25 V

Max Processing Temp 260

Typical Rise Time 12|10 ns

Channel Type N

Mounting Surface Mount

Lead Finish Matte Tin

Channel Mode Enhancement

Maximum Gate Source Voltage ±20 V

Typical Turn-On Delay Time 15|7 ns

Typical Turn-Off Delay Time 14|15 ns

Operating Temperature -55 to 150 °C

Maximum Continuous Drain Current 13.6 A

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买SIS436DN-T1-GE3
型号: SIS436DN-T1-GE3
描述:Trans MOSFET N-CH 25V 13.6A 8Pin PowerPAK 1212 T/R

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