SI2337DS-T1-E3

VISHAY  SI2337DS-T1-E3  晶体管, P沟道

The is a 80VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.

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-55 to 150°C Operating temperature range

e络盟:
VISHAY  SI2337DS-T1-E3  晶体管, MOSFET, P沟道, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V

艾睿:
Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R

安富利:
Trans MOSFET P-CH 80V 1.2A 3-Pin TO-236 T/R

富昌:
单 P沟道 80 V 0.27 Ohms 表面贴装 功率Mosfet - TO-236

Verical:
Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2337DS-T1-E3  MOSFET Transistor, P Channel, -2.2 A, -80 V, 0.216 ohm, -6 V, -4 V