SI4464DY-T1-E3

MOSFET, Power; N-Ch; VDSS 200V; RDSON 0.195Ω; ID 1.7A; SO-8; PD 1.5W; VGS +/-20V

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

艾睿:
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R

安富利:
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R

富昌:
单 N 沟道 200 V 0.24 Ohms 表面贴装 功率 Mosfet - SOIC-8

Verical:
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4464DY-T1-E3  MOSFET Transistor, N Channel, 1.7 A, 200 V, 195 mohm, 10 V, 2 V