SI7848BDP-T1-GE3参数规格_中文资料_数据手册PDF

SI7848BDP-T1-GE3概述

VISHAY SI7848BDP-T1-GE3 晶体管, MOSFET, N沟道, 47 A, 40 V, 0.0074 ohm, 10 V, 3 V

The is a 40V N-channel TrenchFET® Power MOSFET. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.

.: Halogen-free according to IEC 61249-2-21 definition

.: 100% Rg Tested

.: 100% UIS Tested

SI7848BDP-T1-GE3中文资料参数规格

技术参数

针脚数 8

漏源极电阻 0.0074 Ω

极性 N-Channel

耗散功率 36 W

阈值电压 3 V

漏源极电压Vds 40 V

连续漏极电流Ids 47.0 A

工作温度Max 150 ℃

封装参数

引脚数 8

封装 PowerPAK SO

外形尺寸

封装 PowerPAK SO

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

数据手册

在线购买SI7848BDP-T1-GE3

型号： SI7848BDP-T1-GE3

制造商： Vishay Semiconductor 威世

描述：VISHAY SI7848BDP-T1-GE3 晶体管, MOSFET, N沟道, 47 A, 40 V, 0.0074 ohm, 10 V, 3 V

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