SI4850EY-T1-E3

VISHAY  SI4850EY-T1-E3  晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V

The is a TrenchFET® N-channel enhancement-mode Power MOSFET with reduced total dynamic gate charge Qg.

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Fast switching

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175°C Maximum junction temperature

欧时:
### N 通道 MOSFET，60V 至 90V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

e络盟:
VISHAY  SI4850EY-T1-E3  晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V

艾睿:
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R

富昌:
单 N 沟道 60 V 0.022 Ohms 表面贴装 功率 Mosfet - SOIC-8

Verical:
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4850EY-T1-E3  MOSFET Transistor, N Channel, 8.5 A, 60 V, 0.018 ohm, 4.5 V, 1 V

力源芯城:
60V,8.5A,N沟道MOSFET