SI4840BDY-T1-E3

VISHAY  SI4840BDY-T1-E3  晶体管, MOSFET, N沟道, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V

The is a 40V N-channel TrenchFET® Power MOSFET with power dissipation at 6W. Suitable for synchronous rectification.

.

100% Rg Tested

.

100% UIS Tested

.

Halogen-free

艾睿:
Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R

富昌:
单通道 N 沟道 40 V 9 mOhm 表面贴装 功率 Mosfet - SOIC-8

TME:
Transistor: N-MOSFET; unipolar; 40V; 12.4A; 2.5W; SO8

Newark:
# VISHAY  SI4840BDY-T1-E3  MOSFET Transistor, N Channel, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V