VISHAY SUD50P04-08-GE3 晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
The from Vishay is a surface mount, 40V P channel TrenchFET power MOSFET in TO-252 package. This device is used as power switch, DC to DC converters and load switch in high current applications.
- .
- Drain to source voltage Vds of -40V
- .
- Gate to source voltage of ±20V
- .
- Continuous drain current Id of -50A
- .
- Power dissipation Pd of 73.5W
- .
- Low on state resistance of 9.7mohm at Vgs -4.5V
- .
- Operating junction temperature range from -55°C to 150°C
针脚数 3
漏源极电阻 0.0067 Ω
极性 P-Channel
耗散功率 73.5 W
上升时间 12 ns
下降时间 18 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 73.5 W
安装方式 Surface Mount
引脚数 3
封装 TO-252
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252
工作温度 -55℃ ~ 150℃
包装方式 Tape & Reel TR
制造应用 Power Management, Portable Devices, 便携式器材, 工业, 消费电子产品, Industrial, 电源管理, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SUD50P04-08-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SUD50P04-13L-E3 威世 | 类似代替 | SUD50P04-08-GE3和SUD50P04-13L-E3的区别 |
SUD50P04-13L-GE3 威世 | 类似代替 | SUD50P04-08-GE3和SUD50P04-13L-GE3的区别 |
SUD50P04-08 威世 | 类似代替 | SUD50P04-08-GE3和SUD50P04-08的区别 |