SI7149DP-T1-GE3概述
VISHAY SI7149DP-T1-GE3 晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V
The is a -30V P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The P-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
- .
- Halogen-free according to IEC 61249-2-21 definition
- .
- 100% UIS Tested
SI7149DP-T1-GE3中文资料参数规格
技术参数
针脚数 8
漏源极电阻 0.0042 Ω
极性 P-Channel
耗散功率 69 W
输入电容Ciss 4590pF @15VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 5200 mW
封装参数
安装方式 Surface Mount
引脚数 8
封装 SOIC
外形尺寸
高度 1.04 mm
封装 SOIC
其他
包装方式 Tape & Reel TR
制造应用 Computers & Computer Peripherals, Power Management, 消费电子产品, 计算机和计算机周边, 电源管理, Consumer Electronics
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
在线购买SI7149DP-T1-GE3
型号： SI7149DP-T1-GE3
描述：VISHAY SI7149DP-T1-GE3 晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V