SI7611DN-T1-GE3

VISHAY  SI7611DN-T1-GE3  晶体管, MOSFET, 沟槽式FET, P沟道, -18 A, -40 V, 0.021 ohm, -10 V, -3 V 新

The is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.

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New low thermal resistance PowerPAK® package with small size and low 1.07mm profile

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100% Rg tested

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Halogen-free

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-50 to 150°C Operating temperature range