SIR882DP-T1-GE3概述
VISHAY SIR882DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 7.1 mohm, 10 V, 1.2 V
The is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.
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- 100% Rg tested
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- 100% UIS tested
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- Halogen-free
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- -55 to 150°C Operating temperature range
在线购买SIR882DP-T1-GE3
型号： SIR882DP-T1-GE3
描述：VISHAY SIR882DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 7.1 mohm, 10 V, 1.2 V
替代型号SIR882DP-T1-GE3
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SIR882DP-T1-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SIR882ADP-T1-GE3 威世 | 功能相似 | SIR882DP-T1-GE3和SIR882ADP-T1-GE3的区别 |