SIHD6N65E-GE3概述
VISHAY SIHD6N65E-GE3 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
The is a 700V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
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- Low figure-of-meritFOM RON x Qg
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- Low input capacitance CISS
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- Reduced switching and conduction losses
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- Ultra low gate charge
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- Avalanche energy rated
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- Halogen-free
SIHD6N65E-GE3中文资料参数规格
技术参数
针脚数 3
漏源极电阻 0.5 Ω
极性 N-Channel
耗散功率 78 W
阈值电压 2 V
漏源极电压Vds 650 V
上升时间 12 ns
下降时间 20 ns
工作温度Max 150 ℃
封装参数
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
外形尺寸
宽度 6.22 mm
封装 TO-252-3
物理参数
工作温度 -55℃ ~ 150℃
其他
包装方式 Bulk
制造应用 Industrial, Lighting, Alternative Energy, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, Communications & Networking, Power Management
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
在线购买SIHD6N65E-GE3
型号： SIHD6N65E-GE3
描述：VISHAY SIHD6N65E-GE3 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V