SIHG32N50D-GE3概述
VISHAY SIHG32N50D-GE3 晶体管, MOSFET, N沟道, 30 A, 500 V, 0.125 ohm, 10 V, 3 V
The is a D series N-channel enhancement-mode Power MOSFET suitable for consumer electronics, telecom power supply and battery charger applications.
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- Low area specific ON-resistance
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- Low input capacitance CISS
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- Reduced capacitive switching losses
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- High body diode ruggedness
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- Avalanche energy rated UIS
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- Simple gate drive circuitry
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- Low figure-of-merit FOM Ron x Qg
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- Fast switching
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- Halogen-free
SIHG32N50D-GE3中文资料参数规格
技术参数
针脚数 3
漏源极电阻 0.125 Ω
极性 N-Channel
耗散功率 390 W
阈值电压 3 V
漏源极电压Vds 500 V
输入电容Ciss 2550pF @10VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 390 W
封装参数
安装方式 Through Hole
引脚数 3
封装 TO-247-3
外形尺寸
长度 15.87 mm
宽度 5.31 mm
高度 20.82 mm
封装 TO-247-3
其他
包装方式 Tube
制造应用 Consumer Electronics, Power Management, Industrial, Portable Devices
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
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型号： SIHG32N50D-GE3
描述：VISHAY SIHG32N50D-GE3 晶体管, MOSFET, N沟道, 30 A, 500 V, 0.125 ohm, 10 V, 3 V