VISHAY SIHP24N65E-E3 功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
The is a 700V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
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- Low figure-of-meritFOM RON x Qg
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- Low input capacitance CISS
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- Reduced switching and conduction losses
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- Ultra low gate charge
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- Avalanche energy rated
通道数 1
针脚数 3
漏源极电阻 0.12 Ω
极性 N-Channel
耗散功率 250 W
阈值电压 2 V
漏源极电压Vds 650 V
漏源击穿电压 650 V
上升时间 84 ns
下降时间 69 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.41 mm
宽度 4.7 mm
高度 15.49 mm
封装 TO-220-3
包装方式 Tube
制造应用 Portable Devices, Lighting, Computers & Computer Peripherals, Power Management, Communications & Networking, Motor Drive & Control, Industrial, Alternative Energy
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SIHP24N65E-E3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SIHP24N65E-GE3 威世 | 类似代替 | SIHP24N65E-E3和SIHP24N65E-GE3的区别 |