VISHAY SIHG47N60E-GE3 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
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- Low figure-of-meritFOM RON x Qg
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- Low input capacitance CISS
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- Reduced switching and conduction losses
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- Ultra low gate charge
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- Avalanche energy rated
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- Halogen-free
通道数 1
针脚数 3
漏源极电阻 0.053 Ω
极性 N-Channel
耗散功率 357 W
阈值电压 2.5 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
上升时间 11 ns
输入电容Ciss 4810pF @100VVds
下降时间 13 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 357 W
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.87 mm
宽度 5.31 mm
高度 20.7 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Computers & Computer Peripherals, Portable Devices, Alternative Energy, Industrial, Motor Drive & Control, Lighting, Communications & Networking, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SIHG47N60E-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SIHG47N60E-E3 威世 | 完全替代 | SIHG47N60E-GE3和SIHG47N60E-E3的区别 |
SIHG47N60S-E3 威世 | 功能相似 | SIHG47N60E-GE3和SIHG47N60S-E3的区别 |