VISHAY SIHG33N60E-GE3 功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
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- Low figure-of-meritFOM RON x Qg
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- Low input capacitance CISS
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- Reduced switching and conduction losses
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- Ultra low gate charge
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- Avalanche energy rated
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- Halogen-free
针脚数 3
漏源极电阻 0.083 Ω
极性 N-Channel
耗散功率 278 W
阈值电压 2 V
漏源极电压Vds 600 V
上升时间 60 ns
输入电容Ciss 3508pF @100VVds
下降时间 54 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 278000 mW
安装方式 Through Hole
引脚数 3
封装 TO-247-3
宽度 5.31 mm
高度 20.7 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Industrial, Lighting, Alternative Energy, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, Communications & Networking, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SIHG33N60E-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IPW60R099CP 英飞凌 | 功能相似 | SIHG33N60E-GE3和IPW60R099CP的区别 |
IPW60R099CPFKSA1 英飞凌 | 功能相似 | SIHG33N60E-GE3和IPW60R099CPFKSA1的区别 |