VISHAY SIHG73N60E-GE3 场效应管, MOSFET, N沟道, 600V, 73A, TO-247AC-3
The is a 650V N-channel MOSFET with super junction technology to minimize on-resistance and withstand high energy pulse. This E series MOSFET features low input capacitance, reduced switching and conduction losses and simple gate drive circuitry. It is designed for soft switching topologies. Suitable for server and telecom power supply applications.
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- 100% Avalanche rated
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- Low figure of merit Ron X Qg
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- Ultra low gate charge
针脚数 3
漏源极电阻 0.032 Ω
极性 N-Channel
耗散功率 520 W
阈值电压 2 V
输入电容 7700pF @100V
漏源极电压Vds 650 V
漏源击穿电压 600 V
上升时间 105 ns
热阻 0.24℃/W RθJC
输入电容Ciss 7700pF @100VVds
下降时间 180 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 520 W
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.87 mm
宽度 5.31 mm
高度 20.7 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 电源管理, Power Management, Communications & Networking, 通信与网络
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99