SIRA18DP-T1-GE3

VISHAY  SIRA18DP-T1-GE3  晶体管, MOSFET, N沟道, 33 A, 30 V, 0.006 ohm, 10 V, 1.2 V

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

欧时:
### N 通道 MOSFET，TrenchFET® Gen IV，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

贸泽:
MOSFET 30V 7.5mOhm@10V 13.3A N-Ch G-IV

艾睿:
Trans MOSFET N-CH 30V 15.5A 8-Pin PowerPAK SO EP T/R

Newark:
# VISHAY  SIRA18DP-T1-GE3  MOSFET Transistor, N Channel, 33 A, 30 V, 0.006 ohm, 10 V, 1.2 V