SI4102DY-T1-GE3

VISHAY  SI4102DY-T1-GE3  晶体管, MOSFET, N沟道, 3.8 A, 100 V, 130 mohm, 10 V, 2 V

The is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for high frequency boost converter and LED backlight for LCD TV applications.

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100% UIS tested

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Halogen-free

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-55 to 150°C Operating temperature range

欧时:
### N 通道 MOSFET，100V 至 150V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

贸泽:
MOSFET 100V 3.8A 4.8W 158mohm @ 10V

艾睿:
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC N T/R

安富利:
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC N T/R

富昌:
Single N-Channel 100 V 2.4 W 3.8 A 0.158 Ω Surface Mount Power Mosfet - SOIC-8

Chip1Stop:
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC N T/R

Verical:
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4102DY-T1-GE3  MOSFET Transistor, N Channel, 3.8 A, 100 V, 130 mohm, 10 V, 2 V