VISHAY SI7456DDP-T1-GE3 晶体管, MOSFET, N沟道, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
The is a 100V N-channel TrenchFET® Power MOSFET. Suitable for telecom and server applications. Used in DC/DC primary side switch and synchronous rectification circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
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- Halogen-free according to IEC 61249-2-21 definition
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- 100% Rg Tested
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- 100% UIS Tested
针脚数 8
漏源极电阻 0.017 Ω
极性 N-Channel
耗散功率 35.7 W
阈值电压 1.5 V
漏源极电压Vds 100 V
输入电容Ciss 900pF @50VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 35.7 W
安装方式 Surface Mount
引脚数 8
封装 SO-8
长度 6.25 mm
宽度 5.26 mm
高度 1.12 mm
封装 SO-8
工作温度 -55℃ ~ 150℃
包装方式 Tape & Reel TR
制造应用 电源管理, 工业, 通信与网络, Power Management, Communications & Networking, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15